tm june 2006 FDMJ1028N n-channel 2.5v specified powertrench ? mosfet ?2006 fairchild semiconductor corporation FDMJ1028N rev. c www.fairchildsemi.com 1 FDMJ1028N n-channel 2.5v spec ified powertrench ? mosfet 20v, 3.2a, 90m ? features ? max r ds(on) = 90m ? at v gs = 4.5v ? max r ds(on) = 130m ? at v gs = 2.5v ? low gate charge ? high performance trench technology for extremely low r ds(on) ? rohs compliant general description this dual n-channel 2.5v specified mosfet uses fairchild's advanced low vo ltage powertrench process. the r ds(on) and thermal properties of the device are optimized for battery power management applications. applications ? battery management ? baseband switches 3 2 1 4 5 6 bottom drain contact bottom drain contact mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 20 v v gs gate to source voltage 12 v i d drain current -continuous 3.2 a -pulsed 12 p d power dissipation for single operation (note 1a) (note 1b) 1.4 w 0.8 t j , t stg operating and storage temperature -55 to +150 c r ja thermal resistance , junction to ambient (note 1a) 89 c/w device marking device reel size tape width quantity 028 FDMJ1028N 7?? 8mm 3000 units
FDMJ1028N n-channel 2.5v specified powertrench ? mosfet FDMJ1028N rev. c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 20 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 13 mv/ c i dss zero gate voltage drain current v ds = 16, v gs = 0v 1 p a i gss gate to source leakage current v gs = 12v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 0.6 1.0 1.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -3 mv/ c r ds(on) drain to source on resistance v gs = 4.5v, i d = 3.2a 76 90 m : v gs = 2.5v, i d = 2.5a 106 130 v gs = 4.5v, i d = 3.2a, t j =125 o c 89 132 g fs forward transconductance v gs = 5v, i d = 3.2a 7.5 s (note 2) dynamic characteristics c iss input capacitance v ds =10v, v gs = 0v, f = 1mhz 200 pf c oss output capacitance 50 pf c rss reverse transfer capacitance 30 pf r g gate resistance f = 1mhz 1 : switching characteristics (note 2) t d(on) turn-on delay time v dd = 10v, i d = 1a v gs = 4.5v, r gs = 6 : 7 14 ns t r rise time 8 16 ns t d(off) turn-off delay time 11 20 ns t f fall time 2 4 ns q g(tot) total gate charge at 10v v dd = 15v, v gs = 3.2v, v gs = 4.5v 2 3 nc q gs gate to source gate charge 0.4 nc q gd gate to drain charge 1.0 nc drain-source diode characteristics v sd drain-source diode forward voltage v gs = 0v, i s = 1.16a 0.8 1.2 v t rr diode reverse recovery time i f = 3.2a, di f /dt = 100a/ p s 11 ns q rr diode reverse recovery charge 2.5 nc notes 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2: pulse test: pulse width < 300 t p s, duty cycle < 2.0% a. 89c/w when mounted on a 1 in 2 pad of 2 oz copper b. 156c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper
FDMJ1028N n-channel 2.5v specified powertrench ? mosfet FDMJ1028N rev. c www.fairchildsemi.com 3 dimensional outline and pad layout typical characteristics t j = 25c unless otherwise noted figure 1. on region characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 10 12 pulse duration = 300 p s duty cycle = 0.2%max v gs = 4v v gs = 4.5v v gs = 3.5v v gs = 3v v gs = 2v v gs = 2.5v i d , drain current (a) v ds , drain to source voltage (v) figure 2. normalized 024681012 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v gs = 4v v gs = 3.5v normalized drain to source on-resistance i d , drain current(a) v gs = 3v v gs = 2.5v v gs = 4.5v pulse duration = 300 p s duty cycle = 0.2%max on-resistance vs drain current and gate voltage figure 3. -60 -30 0 30 60 90 120 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 i d = 3.2a v gs = 4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) normalized on resistance vs junction temperature figure 4. 12345 0.04 0.08 0.12 0.16 0.20 0.24 0.28 r ds(on) , drain to source on-resistance ( : ) v gs , gate to source voltage (v) t a = 25 o c t a = 125 o c i d = 1.6a pulse duration = 300 p s duty cycle = 0.2%max on-resistance vs gate to source voltage figure 5. transfer characteristics 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 t a = -55 o c t a = 25 o c t a = 150 o c pulse duration = 300 p s duty cycle = 0.2%max i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.00.20.40.60.81.01.2 1e-4 1e-3 0.01 0.1 1 10 t a = -55 o c t a = 25 o c t a = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 50 source to drain diode forward voltage vs source current
FDMJ1028N n-channel 2.5v specified powertrench ? mosfet FDMJ1028N rev. c www.fairchildsemi.com 4 figure 7. 012345 0 2 4 6 8 10 v dd = 15v v dd = 10v v dd = 5v i d = 3.2a v gs , gate to source voltage(v) q g , gate charge(nc) gate charge characteristics figure 8. 0.1 1 10 10 100 600 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 capacitance vs drain to source voltage figure 9. 25 50 75 100 125 150 0 1 2 3 4 r t ja = 89 o c/w v gs = 4.5v v gs = 2.5v -i d , drain current (a) t a , ambient temperature( o c) maximum continuous drain current vs ambient temperature figure 10. 0.1 1 10 0.01 0.1 1 10 60 10us dc 10s 1s 100ms 10ms 1ms 100us i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c 50 forward bias safe operating area figure 11. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 1000 single pulse v gs = 10v p ( pk ) , peak transient power (w) t, pulse width (s) t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - single pulse maximum power dissipation typical characteristics t j = 25c unless otherwise noted
FDMJ1028N n-channel 2.5v specified powertrench ? mosfet FDMJ1028N rev. c www.fairchildsemi.com 5 figure 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration(s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMJ1028N n-channel 2.5v specified powertrench ? mosfet FDMJ1028N rev. c www.fairchildsemi.com 6 dimensional outline and pad layout
FDMJ1028N rev. c www.fairchildsemi.com 7 FDMJ1028N n-channel 2.5v specified powertrench ? mosfet trademarks the following are registered and unregistered trademarks fairch ild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, functi on or design. fairchild does not assume any liability arising out of the application or u se of any product or circuit described herein; neither does it convey any license under its pat ent rights, nor the rights of others. these specifications do not expand the terms of fa irchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? scalarpump? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? across the board. around the world.? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i19
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